Washington, Dec. 31 (ANI): A new Magnetoresistive Random Access Memory (MRAM) technology has been developed by a team of researchers that will boost information storage in electronic systems.
The team from the Department of Electrical and Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering developed the technology, which will drastically increase storage space and enhance memory.
The technology will also ensure that fresh data stays intact even in the case of a power failure.
The team has already filed a US provisional patent for their technology.
Led by Dr Yang Hyunsoo, the team developed a new device structure useful for the next generation MRAM chip, which can potentially be applied to enhance the user experience in consumer electronics, including personal computers and mobile devices such as laptops and mobile phones.
The new technology can also be applied in transportation, military and avionics systems, industrial motor control and robotics, industrial power and energy management as well as health care electronics.
Major semiconductor players such as Samsung, Intel, Toshiba and IBM are intensifying research efforts in MRAM and the team's innovative technology has received strong interest from the industry.(ANI)
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